Structural and dielectric properties of ZrTiO4 and Zr0.8Sn0.2TiO4 deposited by pulsed laser deposition
β Scribed by M. Viticoli; G. Padeletti; S. Kaciulis; G.M. Ingo; L. Pandolfi; C. Zaldo
- Publisher
- Elsevier Science
- Year
- 2005
- Tongue
- English
- Weight
- 256 KB
- Volume
- 118
- Category
- Article
- ISSN
- 0921-5107
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
Zr-Al-O dielectric films have been deposited on Pt-coated silicon substrates and directly on n-type Si substrates, respectively, by pulsed laser deposition technique using a (ZrO ) (Al O ) ceramic target. The 2 0.5 2 3 0.5 Zr-Al-O films deposited in 20 Pa oxygen ambient at 300 8C substrate temperat
Bulk (Zr ,Sn )TiO ceramics have shown excellent dielectric properties at microwave frequencies; 0.8 0.2 4 however, the high sintering temperature of the bulk materials is the major obstacle in their use as dielectric resonators to miniaturize microwave circuits. It was possible to obtain highly orie