Properties of preferential (Zr0.8,Sn0.2)TiO4 thin films prepared by rf magnetron sputtering for microwave application

✍ Scribed by W.X Cheng; A.L Ding; P.S Qiu; Y Zhang; X.Y He; X.Sh Zheng

• Publisher: Elsevier Science
• Year: 2003
• Tongue: English
• Weight: 149 KB
• Volume: 66
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/s0167-9317(02)00978-4

✦ Synopsis

Bulk (Zr ,Sn )TiO ceramics have shown excellent dielectric properties at microwave frequencies; 0.8 0.2 4 however, the high sintering temperature of the bulk materials is the major obstacle in their use as dielectric resonators to miniaturize microwave circuits. It was possible to obtain highly oriented ( 111) thin films at substrate temperature of 350 8C and annealing at 650 8C for 10 min by RTA, which is much lower than the bulk sintering temperatures. The electric measurements were conducted on Pt / ZST /Au capacitors. The typical measured small signal dielectric constant and dissipation factor at 100 kHz were 36.5 and 0.0062, respectively. The dielectric constant of the films was comparable to the typical value (38) reported for the bulk ceramics. The temperature coefficient of capacitance was 80.6 ppm / 8C in the measured range of 25-125 8C. The leakage 27 2 current density was lower than 10 A / cm at an applied electric field of 0.4 MV/ cm. The high dielectric constant, which is comparable to the bulk, low dielectric loss, and good temperature stability suggest the suitability of ZST thin films for microwave communications and integrated capacitor applications.