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Structural analysis of GaAs(0 0 1)-c(4×4) with LEED IV technique

✍ Scribed by A. Nagashima; M. Tazima; A. Nishimura; Y. Takagi; J. Yoshino


Book ID
117215955
Publisher
Elsevier Science
Year
2001
Tongue
English
Weight
243 KB
Volume
493
Category
Article
ISSN
0039-6028

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We have investigated the initial growth mechanism of MnAs on GaAs(0 0 1)-c(4 Â 4)a reconstructed surfaces. We found that the MnAs deposition on GaAs(0 0 1)-c(4 Â 4)a surface promotes to break the Ga-As asymmetric dimers and modulates the dimer characteristics to symmetric As-As dimer formation on th