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Strong Photoluminescence Emission from GaN on SrTiO3

✍ Scribed by H. Tampo; H. Asahi; M. Hiroki; K. Asami; S. Gonda

Publisher
John Wiley and Sons
Year
1999
Tongue
English
Weight
135 KB
Volume
216
Category
Article
ISSN
0370-1972

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✦ Synopsis

GaN layers are grown on SrTiO 3 (100) substrates by gas source molecular beam epitaxy (MBE). From X-ray diffraction (XRD) measurements it is obvious that GaN on SrTiO 3 has strong c-oriented nature and polycrystalline structure. However, it shows strong and narrow photoluminescence (PL) emission without deep level emission. Compared with polycrystalline GaN on silica glass, the PL peak is slightly red-shifted, which agrees with the XRD result. The results suggest the possibility of the growth of strong PL emission GaN on ferroelectric or magnetic oxide layers grown on SrTiO 3 substrate to produce new functional devices.

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