GaN quantum dots (QDs) in AlN matrix were grown by molecular beam epitaxy on silicon (111) substrates using NH 3 as nitrogen precursor. QDs were formed under growth interruption by two-dimensionalΒ±three-dimensional strain induced transition. Their size was controlled by the GaN nominal thickness dep
β¦ LIBER β¦
Luminescence and Stimulated Emission from GaN on Silicon Substrates Heterostructures
β Scribed by Yablonskii, G.P. ;Lutsenko, E.V. ;Pavlovskii, V.N. ;Zubialevich, V.Z. ;Gurskii, A.L. ;Kalisch, H. ;Szymakowskii, A. ;Jansen, R.A. ;Alam, A. ;Dikme, Y. ;Schineller, B. ;Heuken, M.
- Publisher
- John Wiley and Sons
- Year
- 2002
- Tongue
- English
- Weight
- 103 KB
- Volume
- 192
- Category
- Article
- ISSN
- 0031-8965
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β¦ Synopsis
Lutsenko (a), V. N. Pavlovskii (a), V. Z. Zubialevich (a), A. L. Gurskii (a), H. Kalisch (b), A. Szymakowskii (b), R. A. Jansen (b), A. Alam (c), Y. Dikme (c), B. Schineller (c), and M. Heuken (c)
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