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Luminescence and Stimulated Emission from GaN on Silicon Substrates Heterostructures

✍ Scribed by Yablonskii, G.P. ;Lutsenko, E.V. ;Pavlovskii, V.N. ;Zubialevich, V.Z. ;Gurskii, A.L. ;Kalisch, H. ;Szymakowskii, A. ;Jansen, R.A. ;Alam, A. ;Dikme, Y. ;Schineller, B. ;Heuken, M.


Publisher
John Wiley and Sons
Year
2002
Tongue
English
Weight
103 KB
Volume
192
Category
Article
ISSN
0031-8965

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✦ Synopsis


Lutsenko (a), V. N. Pavlovskii (a), V. Z. Zubialevich (a), A. L. Gurskii (a), H. Kalisch (b), A. Szymakowskii (b), R. A. Jansen (b), A. Alam (c), Y. Dikme (c), B. Schineller (c), and M. Heuken (c)


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GaN quantum dots (QDs) in AlN matrix were grown by molecular beam epitaxy on silicon (111) substrates using NH 3 as nitrogen precursor. QDs were formed under growth interruption by two-dimensionalΒ±three-dimensional strain induced transition. Their size was controlled by the GaN nominal thickness dep