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Strikingly Different Behaviors of Photoluminescence and Terahertz Generation in InGaN/GaN Quantum Wells

โœ Scribed by Guan Sun, ; Ruolin Chen, ; Ding, Y. J.; Hongping Zhao, ; Guangyu Liu, ; Jing Zhang, ; Tansu, N.


Book ID
126634671
Publisher
IEEE
Year
2013
Tongue
English
Weight
477 KB
Volume
19
Category
Article
ISSN
1077-260X

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Photoluminescence Dynamics of InGaN/GaN
โœ M. Klose; K.P. Korona; J. Kuhl; M. Heuken ๐Ÿ“‚ Article ๐Ÿ“… 1999 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 204 KB ๐Ÿ‘ 2 views

The photoluminescence (PL) dynamics of InGaN/GaN quantum wells with different In concentrations x In have been measured. The PL emission forms a broad band consisting of two parts with dramatically different dynamics. The high energy part (QW H ) is present only under higher excitation densities (>1