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Stress relaxation in Si-doped GaN studied by Raman spectroscopy

✍ Scribed by Lee, In-Hwan; Choi, In-Hoon; Lee, Cheul-Ro; Shin, Eun-joo; Kim, Dongho; Noh, Sam Kyu; Son, Sung-Jin; Lim, Ki Yong; Jae Lee, Hyung

Book ID: 120517296
Publisher: American Institute of Physics
Year: 1998
Tongue: English
Weight: 348 KB
Volume: 83
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.367501

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