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Stress measurements in Si microelectronics devices using Raman spectroscopy

✍ Scribed by Ingrid De Wolf

Publisher
John Wiley and Sons
Year
1999
Tongue
English
Weight
978 KB
Volume
30
Category
Article
ISSN
0377-0486

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✦ Synopsis

The application of micro-Raman spectroscopy for the measurement of local stress in silicon microelectronics samples is discussed. Practical issues of concern for local stress measurements using micro-Raman spectroscopy are dealt with.

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