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Stress in a-Si1−xCx:H studied by (n, −n) double crystal diffractometry

✍ Scribed by Zhouyao Zhang; Mingwei Qi; Jingyi Chen; Ruguang Cheng


Book ID
115987093
Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
158 KB
Volume
114
Category
Article
ISSN
0022-3093

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The a-Si N, ,:Hic-Si interface density of states is studied by the photocapacitance transient spectroscopy (PCTS) technique. After illumination with 4.13 eV photons, the PCTS reveals an interface defect creation while the midgap voltage shift indicates a hole injection from c-Si and subsequent hole