𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Stress-engineered spatially selective self-assembly of strained InAs quantum dots on nonplanar patterned GaAs(001) substrates

✍ Scribed by Konkar, A.; Madhukar, A.; Chen, P.

Book ID
121830602
Publisher
American Institute of Physics
Year
1998
Tongue
English
Weight
502 KB
Volume
72
Category
Article
ISSN
0003-6951

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Selective growth of GaAs nanostructures
Selective growth of GaAs nanostructures and subsequent guided self-assembly of InAs quantum dots on nanoimprint lithography patterned SiO2/GaAs substrates
✍ A. Tukiainen; J. Tommila; A. Aho; A. Schramm; J. ViheriΓ€lΓ€; R. Ahorinta; M. Dumi πŸ“‚ Article πŸ“… 2011 πŸ› Elsevier Science 🌐 English βš– 833 KB

We report a comparative study on selective epitaxy of nanostructures with different geometrical shapes. GaAs pyramids were grown by molecular beam epitaxy into circular holes, L-shaped holes, and cross-shaped holes, patterned using nanoimprint lithography. These GaAs nanostructures were used for gui

Site-selective growth of self-assembled
Site-selective growth of self-assembled InAs quantum dots on focused ion beam patterned GaAs
✍ M. Mehta; D. Reuter; A. Melnikov; A.D. Wieck; A. Remhof πŸ“‚ Article πŸ“… 2008 πŸ› Elsevier Science 🌐 English βš– 373 KB

A site-selective growth of self-organized InAs quantum dots (QDs) employing a combination of in-situ focused ion beam (FIB) implantation and self-organized molecular beam epitaxy (MBE) growth has been successfully demonstrated. First, a buffer layer of GaAs was grown by MBE before a square lattice o