Complex laterally ordered InGaAs and InAs quantum dots by guided self-organized anisotropic strain engineering on shallow- and deep-patterned GaAs (311)B substrates

✍ Scribed by Selçuk, E.; Hamhuis, G. J.; Nötzel, R.

• Book ID: 126802486
• Publisher: American Institute of Physics
• Year: 2007
• Tongue: English
• Weight: 885 KB
• Volume: 102
• Category: Article
• ISSN: 0021-8979
• DOI: 10.1063/1.2801364