Origins of GaN(0 0 0 1) s
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S VΓ©zian; F Semond; J Massies; D.W Bullock; Z Ding; P.M Thibado
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Article
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2003
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Elsevier Science
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English
β 448 KB
The reconstructions of the Ga polarity GaN(0 0 0 1) surface with and without trace amounts of arsenic and prepared by molecular beam epitaxy (MBE) have been studied with in situ reflection high-energy electron diffraction (RHEED) and scanning tunneling microscopy (STM). Various reconstructions are o