Strained layer piezoelectric semiconductor devices

✍ Scribed by G.J. Rees

• Book ID: 104157785
• Publisher: Elsevier Science
• Year: 1997
• Tongue: English
• Weight: 738 KB
• Volume: 28
• Category: Article
• ISSN: 0026-2692
• DOI: 10.1016/s0026-2692(96)00135-8

✦ Synopsis

IlI-V semiconductors are piezoelectric. Quantum wells grown pseudomorphically strained on the (111) face are axially polarized and include strong, built-in dc electric fields. The associated loss of inversion symmetry in the wells has important consequences for the electrooptic properties of these structures. They can be exploited to improve the performance of a number of existing optoelectronic devices and also to generate new ones. In this paper we revicw some of these properties and discuss the work at Sheffield investigating the prospects for improved performance and novel devices in the strained InGaAs/ AIGaAs/GaAs and lnGaAs/InA1As/InP systems.