Growth of strained-layer semiconductor-metal-semiconductor heterostructures
β Scribed by R. T. Tung; J. M. Gibson; A. F. J. Levi
- Book ID
- 121815330
- Publisher
- American Institute of Physics
- Year
- 1986
- Tongue
- English
- Weight
- 484 KB
- Volume
- 48
- Category
- Article
- ISSN
- 0003-6951
- DOI
- 10.1063/1.96998
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π SIMILAR VOLUMES
IlI-V semiconductors are piezoelectric. Quantum wells grown pseudomorphically strained on the (111) face are axially polarized and include strong, built-in dc electric fields. The associated loss of inversion symmetry in the wells has important consequences for the electrooptic properties of these s
We present a study of changes in the layer morphology of symmetrically strained (GaIn)As/ \(\mathrm{Ga}(\mathrm{PAs})\) superlattices as a function of strain and off-orientation of substrates. The samples were deposited by metal-organic vapour-phase epitaxy (MOVPE). For samples grown on exactly orie