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Strained-layer InGaAs-GaAs-InGaP buried-heterostructure quantum-well lasers on a low-composition InGaAs substrate by selective-area MOCVD

โœ Scribed by Jones, A.M.; Coleman, J.J.; Lent, B.; Moore, A.H.; Bonner, W.A.


Book ID
119786649
Publisher
IEEE
Year
1998
Tongue
English
Weight
62 KB
Volume
10
Category
Article
ISSN
1041-1135

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