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Strained-insulator InxAl1-xAs/n+-In0.53Ga 0.47As heterostructure field-effect transistors

✍ Scribed by Bahl, S.R.; Azzam, W.J.; del Alamo, J.A.

Book ID: 114538113
Publisher: IEEE
Year: 1991
Tongue: English
Weight: 738 KB
Volume: 38
Category: Article
ISSN: 0018-9383
DOI: 10.1109/16.83719

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