Strain-relaxed, high-speed In0.2Ga0.8As MQW p-i-n photodetectors grown by MBE

✍ Scribed by E.C. Larkins; G. Bender; H. Schneider; J.D. Ralston; J. Wagner; W. Rothemund; B. Dischler; J. Fleissner; P. Koidl

• Publisher: Elsevier Science
• Year: 1993
• Tongue: English
• Weight: 500 KB
• Volume: 127
• Category: Article
• ISSN: 0022-0248
• DOI: 10.1016/0022-0248(93)90578-k