Strain relaxation in InxGa1-xAs/GaAs heterostructures
✍ Scribed by Flagmeyer, R. ;Pietsch, U. ;Rhan, H. ;Höricke, M. ;Jenichen, B.
- Publisher
- John Wiley and Sons
- Year
- 1989
- Tongue
- English
- Weight
- 253 KB
- Volume
- 113
- Category
- Article
- ISSN
- 0031-8965
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## Abstract The effect of dilute N alloying and Bi surfactant growth on strain relaxation in highly strained InGaAs single quantum well (QWs) was investigated by using high resolution X‐ray diffraction (HRXRD) and transmission electron microscopy (TEM). Dilute nitride In~__x__~Ga~1–__x__~As~0.99~N~
We performed a series of Raman and photoreflectance measurements on several \(I n_{x} G a_{1-x} A s / G a A s\) strained layer superlattices of the same period but of different alloy compositions and substrate orientations. Both types of measurements are used in order to estimate the in-plane strain