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Strain relaxation in (0001) AlN/GaN heterostructures

✍ Scribed by Bourret, Alain; Adelmann, Christoph; Daudin, Bruno; Rouvière, Jean-Luc; Feuillet, Guy; Mula, Guido

Book ID
121700485
Publisher
The American Physical Society
Year
2001
Tongue
English
Weight
858 KB
Volume
63
Category
Article
ISSN
1098-0121

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📜 SIMILAR VOLUMES

Strain relaxation in AlN/GaN heterostruc
Strain relaxation in AlN/GaN heterostructures grown by molecular beam epitaxy
✍ Dimitrakopulos, G. P. ;Komninou, Ph. ;Kehagias, Th. ;Sahonta, S.-L. ;Kioseoglou, 📂 Article 📅 2008 🏛 John Wiley and Sons 🌐 English ⚖ 384 KB

## Abstract The strain distribution and defects in a graded AlN/GaN heterostructure comprising AlN layers from 3 nm up to 100 nm grown by plasma‐assisted MBE were studied using transmission electron microscopy techniques. Gradual strain relaxation was observed as well as strain partitioning between