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Strain related shallow levels in (100)- and (311)-oriented InGaAs/GaAs quantum well structures

✍ Scribed by F.E.G Guimarães; D Lubyshev; S.W da Silva; V.A Chitta; J.C Galzerani; P Basmaji

Book ID
103390666
Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
107 KB
Volume
93
Category
Article
ISSN
0038-1098

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Effect of alloy disorder and structural defects on excitonic properties in (100)- and (311)-Oriented InGaAs/GaAs quantum wells
✍ F.E.G. Guimarães; D. Lubyshev; V.A. Chitta; P. Basmaji 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 211 KB

The properties of excitonic states in pseudomorphic, (100)- and (311)-oriented \(\mathrm{In}_{0.2} \mathrm{Gr}_{0}{ }_{8} \mathrm{As} / \mathrm{GaAs}\) quantum well (QW) structures are investigated. Strained QW's with different states of strain and segregation were grown by molecular beam epitaxy. N