Strain Reduction in Selectively Grown CdTe by MBE on Nanopatterned Silicon on Insulator (SOI) Substrates

Stacking fault reduction in Silicon-on-I

Stacking fault reduction in Silicon-on-Insulator (SOI) islands produced by Selective Epitaxial Growth (SEG) of Silicon using a thermally nitrided SiO2 field insulator

✍ Gerold W. Neudeck; Keith D. Merritt; Jack P. Denton 📂 Article 📅 1997 🏛 Elsevier Science 🌐 English ⚖ 420 KB

A method to fabricate silicon-on-insulator (SOI) device sized islands, using Epitaxiai Lateral Overgrowth (ELO) from the Selective Epitaxial Growth (SEG) of Silicon, has =96.3% stacking fault-free SO1 islands when SiO2 was used as the field insulator. When a nitrided thermal SiO 2 was used =99% of t