Strain mapping around dislocations in diamond and cBN
β Scribed by Willems, B. ;Nistor, L. C. ;Ghica, C. ;Van Tendeloo, G.
- Publisher
- John Wiley and Sons
- Year
- 2005
- Tongue
- English
- Weight
- 438 KB
- Volume
- 202
- Category
- Article
- ISSN
- 0031-8965
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β¦ Synopsis
Abstract
Strain fields around dislocations in diamond and cBN have been quantitatively characterized at a sub nanometer scale. The combination of experimental high resolution electron microscopy (HREM) and image analysis using the geometric phase method provides an accurate determination of the local deformations and strain. The results of the strain analysis of the 60Β° perfect dislocation in diamond and cBN are discussed. (Β© 2005 WILEYβVCH Verlag GmbH & Co. KGaA, Weinheim)
π SIMILAR VOLUMES
## Abstract The reliability of microelectronics devices strongly depends on defects like dislocations in the semiconductor wafers. Whereas several methods are routinely used to measure the dislocation density and residual stress in wafers, there is a need of methods to characterize the strain and s
## Abstract The reliability of microelectronics devices strongly depends on defects like dislocations in the semiconductor wafers. Whereas several methods are routinely used to measure the dislocation density and residual stress in wafers, there is a need of methods to characterize the strain and s