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Strain in PbTe/SnTe heterojunctions grown on (001) KCI

✍ Scribed by AI Fedorenko; ON Nashchekina; BA Savitskii; LP Shpakovskaya; OA Mironov; M Oszwaldowski


Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
360 KB
Volume
43
Category
Article
ISSN
0042-207X

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Step-Bunching Evidence in Strained InxGa
✍ de Sales, F.V. ;Soler, M.A.G. ;Ugarte, D. ;Quivy, A.A. ;da Silva, S.W. ;Martini, πŸ“‚ Article πŸ“… 2001 πŸ› John Wiley and Sons 🌐 English βš– 117 KB πŸ‘ 2 views

In this study the influence of the interface morphology upon the photoluminescence of thick InGaAs/GaAs strained quantum wells has been investigated. Samples grown by molecular beam epitaxy, using GaAs (001) substrates with a miscut of 6 towards (111)A, have been studied using low temperature photol