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Strain-confined wires and dots at a GaAs/AlxGa1-xAs interface

โœ Scribed by Yitong Gu; Yong Zhang; M.D. Sturge; K. Kash; B.P. Van der Gaag; A.S. Gozdz; L.T. Florez; J.P. Harbison


Book ID
102620520
Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
148 KB
Volume
17
Category
Article
ISSN
0749-6036

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๐Ÿ“œ SIMILAR VOLUMES


Accumulation layer and interface effects
โœ Alexander K. Freire; J.Ribeiro Filho; Gil A. Farias; Valder N. Freire ๐Ÿ“‚ Article ๐Ÿ“… 1995 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 159 KB

A theoretical model is proposed to describe doped nonabrupt \(\mathrm{GaAs} / \mathrm{Al}_{x} \mathrm{Ga}_{1-x} \mathrm{As}\) heterojunctions. It is used to study interface effects on the transmission properties and energy levels of electrons in these heterostructures. It is showed that interface ef