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Strain and critical layer thickness analysis of carbon-doped GaAs

✍ Scribed by Seong-Il Kim; Moo-Sung Kim; Suk-Ki Min


Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
399 KB
Volume
97
Category
Article
ISSN
0038-1098

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Improved InGaP/GaAs/InGaP Ξ΄-doped double
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This paper reports on the fabrication and characterization of InGaP/GaAs/InGaP Ξ΄-doped double heterojunction bipolar transistors (Ξ΄-DHBTs) with an InGaP passivation layer. Effects of passivation layer thickness on the performance of the studied devices were investigated. Various passivation layer th