STM/STS study of metal-to-Mott-insulator transitions

✍ Scribed by T. Hanaguri; Y. Kohsaka; K. Iwaya; S. Satow; K. Kitazawa; H. Takagi; M. Azuma; M. Takano

• Publisher: Elsevier Science
• Year: 2004
• Tongue: English
• Weight: 282 KB
• Volume: 408-410
• Category: Article
• ISSN: 0921-4534
• DOI: 10.1016/j.physc.2004.02.133

✦ Synopsis

We performed low-temperature scanning tunneling microscopy/spectroscopy (STM/STS) on Ca 2Àx Na x CuO 2 Cl 2 and NiS 2Àx Se x , which are filling and bandwidth-controlled Mott transition systems, respectively. STM images of Ca 2Àx Na x CuO 2 Cl 2 show inhomogeneous patch-like corrugations which are originated from the spatial variations of the local density of states. Such an electronic inhomogeneity is absent in NiS 2Àx Se x , except in the close vicinity of the metalinsulator transition (MIT). These results suggest that the change in electronic states across the MIT is different between filling-and bandwidth-controlled Mott transition systems.