✦ LIBER ✦

Stimulated emission in MOVPE-grown GaN film

✍ Scribed by Hiroshi Amano; Tsunemori Asahi; Masahiro Kito; Isamu Akasaki

Publisher: Elsevier Science
Year: 1991
Tongue: English
Weight: 268 KB
Volume: 48-49
Category: Article
ISSN: 0022-2313
DOI: 10.1016/0022-2313(91)90264-v

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Green Emission from Tb-Doped GaN Grown b

Green Emission from Tb-Doped GaN Grown by MOVPE

✍ K. Hara; N. Ohtake; K. Ishii 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 125 KB

Stimulated emission from electron-hole p

Stimulated emission from electron-hole plasmas in MOVPE grown ZnSe epilayers

✍ I. Pelant; D. Ohlmann; O. Crégut; R.L. Aulombard; O. Briot; B. Hönerlage; R. Lév 📂 Article 📅 1992 🏛 Elsevier Science 🌐 English ⚖ 338 KB

GaN single crystal films on silicon subs

GaN single crystal films on silicon substrates grown by MOVPE

✍ Takao Nagatomo; Ichiro Ochiai; Shigeo Ookoshi; Osamu Omoto 📂 Article 📅 1991 🏛 Elsevier Science 🌐 English ⚖ 244 KB

Zn related electroluminescent properties

✍ H. Amano; K. Hiramatsu; M. Kito; N. Sawaki; I. Akasaki 📂 Article 📅 1988 🏛 Elsevier Science 🌐 English ⚖ 458 KB

Photoluminescence of V-doped GaN thin fi

Photoluminescence of V-doped GaN thin films grown by MOVPE technique

✍ M. Souissi; Z. Chine; A. Bchetnia; H. Touati; B. El Jani 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 147 KB

This work reports the photoluminescence (PL) study of vanadium-doped GaN (GaN: V) in the 9-300 K range. Samples have been successfully prepared on sapphire substrates by metalorganic vapour phase epitaxy technique (MOVPE). At room temperature (RT) the PL spectra of GaN: V are dominated by a blue ban

Behavior of Threading Dislocations in SA

Behavior of Threading Dislocations in SAG-GaN Grown by MOVPE

✍ Horibuchi, K. ;Kuwano, N. ;Oki, K. ;Kawaguchi, Y. ;Sawaki, N. ;Hiramatsu, K. 📂 Article 📅 2000 🏛 John Wiley and Sons 🌐 English ⚖ 161 KB 👁 2 views