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Status of Reliability of GaN-Based Heterojunction Field Effect Transistors

✍ Scribed by Leach, J.H.; Morkoc, H.

Book ID: 114565274
Publisher: IEEE
Year: 2010
Tongue: English
Weight: 482 KB
Volume: 98
Category: Article
ISSN: 0018-9219
DOI: 10.1109/jproc.2010.2044858

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## Abstract The authors compared DC and microwave performance of AlGaN/GaN heterojunction field‐effect transistors (HFETs) fabricated on epitaxial structures with different thickness of GaN buffer layer. The structures were grown by low‐pressure metal‐organic vapour phase epitaxy on semi‐insulating