Statistical simulation of leakage currents in MOS and flash memory devices with a new multiphonon trap-assisted tunneling model

✍ Scribed by Larcher, L.

• Book ID: 114617088
• Publisher: IEEE
• Year: 2003
• Tongue: English
• Weight: 550 KB
• Volume: 50
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2003.813236