Statistical modeling of radiation-induced proton transport in silicon: deactivation of dopant acceptors in bipolar devices

✍ Scribed by Rashkeev, S.N.; Fleetwood, D.M.; Schrimpf, R.D.; Pantelides, S.T.

• Book ID: 120540063
• Publisher: IEEE
• Year: 2003
• Tongue: English
• Weight: 365 KB
• Volume: 50
• Category: Article
• ISSN: 0018-9499
• DOI: 10.1109/TNS.2003.820751