Statistical model for the description of the dependence of dislocation density on growth rate in the presence of additives in KCl crystals
✍ Scribed by Dr. L. Malicskó; P. O. Szomor
- Publisher
- John Wiley and Sons
- Year
- 1971
- Tongue
- English
- Weight
- 388 KB
- Volume
- 6
- Category
- Article
- ISSN
- 0232-1300
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
It is shown that in undoped semi-insulating GaAs crystals grown under the stoichiometric conditions both correlated and anticorrelated dependences of the minority carrier lifetime T on the dislocation density Nd could be observed. The above-pointed effect is connected with a slight excess of Ga atom
## Abstract The charge density and its Laplacian at the LiC and CH bond critical points and other features of the electron density distribution of the methyl lithium crystal have been compared by density functional methods for (i) the isolated (LiCH~3~)~4~ tetramer or larger clusters, (ii) for qu