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Statistical metrology for characterizing CMP processes

โœ Scribed by Sharad Prasad; W. Loh; A. Kapoor; E. Chang; B. Stine; D. Boning; J. Chung


Publisher
Elsevier Science
Year
1997
Tongue
English
Weight
385 KB
Volume
33
Category
Article
ISSN
0167-9317

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โœฆ Synopsis


CMP processes are used to planarize layers; however, variations in ILD thickness due to various layout factors can affect the modelling of interconnect parameters. In this paper an overview of 'Statistical Metrology' for CMP processes is presented. Using statistical metrology for CMP the process or interconnect design rules can be optimized for minimal variations.


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