We studied the optical properties of GaAs/Al 0X35 Ga 0X65 As asymmetric double quantum wells at T 4X2 K and in the presence of in-plane magnetic fields up to 20 T. In an electric field F 8 45 kV/cm, electrons and holes are respectively confined in the wide and narrow well and form spatially indirect
β¦ LIBER β¦
Statistical Mechanics of Screened Spatially Indirect Excitons
β Scribed by Nikolaev, V.V. ;Portnoi, M.E.
- Publisher
- John Wiley and Sons
- Year
- 2002
- Tongue
- English
- Weight
- 85 KB
- Volume
- 190
- Category
- Article
- ISSN
- 0031-8965
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In order to model the very recent experimental data on the relaxation kinetics and photoluminescence (PL) dynamics of indirect excitons in high-quality GaAs/AlGaAs coupled quantum wells (QWs) at extremely low bath temperatures T b ΒΌ 0:05 K, we analyze, both analytically and numerically, the relevant