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Statistical 3D ‘atomistic’ simulation of decanano MOSFETs

✍ Scribed by A. Asenov; G. Slavcheva; A.R. Brown; R. Balasubramaniam; J.H. Davies

Publisher
Elsevier Science
Year
2000
Tongue
English
Weight
503 KB
Volume
27
Category
Article
ISSN
0749-6036

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✦ Synopsis

A 3D statistical 'atomistic' simulation technique has been developed to study the effect of the random dopant induced parameter fluctuations in aggressively scaled MOSFETs. Efficient implementation of the 'atomistic' simulation approach has been used to investigate the threshold voltage standard deviation and lowering in the case of uniformly doped MOS-FETs, and in fluctuation-resistant architectures utilising epitaxial-layers and delta-doping. The effect of the random doping in the polysilicon gate on the threshold voltage fluctuations has also been thoroughly investigated. The influence of a single-charge trapping on the channel conductivity in decanano MOSFETs is studied in the 'atomistic' framework as well. Quantum effects are taken into consideration in our 'atomistic' simulations using the density gradient formalism.

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