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Static and dynamic characterization of Si membranes

✍ Scribed by V. Lange; G. Higelin

Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
299 KB
Volume
46
Category
Article
ISSN
0924-4247

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✦ Synopsis

Thin Si films have been characterized by the application of nondestructive optical methods. Reflectance interferometry has been used to determine the thickness of electrochemically etched (\mathrm{Si}) films in the range (0.5-25 \mu \mathrm{m}). The method is suitable for the end point detection during the etching process. It will be shown that Michelson interferometry can be applied to analyze the amplitude and the functional behaviour of the oscillatory motion of thin (\mathrm{Si}) films.

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