We present the first radiative lifetime measurements and magneto-photoluminescence results of excited states in InGaAs/GaAs semiconductor self-assembled quantum dots. By increasing the photo-excitation intensity, excited state interband transitions up to n = 5 can be observed in the emission spectru
State-filling and renormalization in charged InGaAs/GaAs quantum dots
β Scribed by F Guffarth; R Heitz; C.M.A Kapteyn; F Heinrichsdorff; D Bimberg
- Publisher
- Elsevier Science
- Year
- 2002
- Tongue
- English
- Weight
- 211 KB
- Volume
- 13
- Category
- Article
- ISSN
- 1386-9477
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π SIMILAR VOLUMES
Suppressed relaxation in strongly confined InGaAs/GaAs quantum dots (QDs) was investigated by resonantly excited time-resolved photoluminescence spectroscopy. Hot exciton recombination and temperature-dependent relaxation are demonstrated supporting multi-phonon processes to dominate the relaxation
The influence of local charge separation in self-organized In(Ga)As/GaAs quantum dots (QDs) on the exciton dynamics under resonant excitation of the confined exciton in the first excited state is investigated by time-resolved photoluminescence spectroscopy. The oscillator strength and the relaxation