Shape-Dependent Exciton Dynamics in InGaAs/GaAs Quantum Dots
β Scribed by Heitz, R. ;Born, H. ;Guffarth, F. ;Stier, O. ;Schliwa, A. ;Hoffmann, A. ;Bimberg, D.
- Publisher
- John Wiley and Sons
- Year
- 2002
- Tongue
- English
- Weight
- 89 KB
- Volume
- 190
- Category
- Article
- ISSN
- 0031-8965
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β¦ Synopsis
The influence of local charge separation in self-organized In(Ga)As/GaAs quantum dots (QDs) on the exciton dynamics under resonant excitation of the confined exciton in the first excited state is investigated by time-resolved photoluminescence spectroscopy. The oscillator strength and the relaxation rate are shown to depend oppositely on the charge separation, which again depends on the shape and composition profile. A pronounced phonon bottleneck effect is demonstrated for excitons in flat, truncated QDs, whereas recombination-limited dynamics are observed for QDs favouring local charge separation. The results point out possible pathways for optimizing such QDs for device applications.
π SIMILAR VOLUMES
Suppressed relaxation in strongly confined InGaAs/GaAs quantum dots (QDs) was investigated by resonantly excited time-resolved photoluminescence spectroscopy. Hot exciton recombination and temperature-dependent relaxation are demonstrated supporting multi-phonon processes to dominate the relaxation
The spin dynamics in self-organized InAs/GaAs quantum dots have been studied by time-resolved photoluminescence performed under strictly resonant excitation conditions. It is demonstrated that the carrier spins in these nanostructures are totally frozen on the scale of the exciton lifetime.