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Stark effect of D− ion in a quantum well

✍ Scribed by Masamichi Fujito; Akiko Natori; Hitoshi Yasunaga

Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
229 KB
Volume
89
Category
Article
ISSN
0038-1098

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A novel quantum well structure is proposed based on a type II staggered bandoffset material system, for example, an AlSb/InAs/GaSb/AlSb quantum well[1]. In this type of quantum well, the valence band of GaSb is higher than the conduction band of InAs. The overlap band offset property of this quantum