✦ LIBER ✦

Staggered-lineup heterojunctions in the system of GaSbInAs

✍ Scribed by A.N. Baranov; A.N. Imenkov; M.P. Mikhailova; A.A. Rogachev; A.N. Titkov; Yu.P. Yakovlev

Publisher: Elsevier Science
Year: 1990
Tongue: English
Weight: 504 KB
Volume: 8
Category: Article
ISSN: 0749-6036
DOI: 10.1016/0749-6036(90)90334-4

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Observation of double cyclotoron resonan

Observation of double cyclotoron resonance and interband transitions in InAs-GaSb multi-heterojunctions

✍ Y. Guldner; J.P. Vieren; P. Voisin; M. Voos; J.C. Maan; L.L. Chang; L. Esaki 📂 Article 📅 1982 🏛 Elsevier Science 🌐 English ⚖ 342 KB

Evaluation of InAs solubility in the In

Evaluation of InAs solubility in the InAsSn system

✍ L. Hitova; R. Yakimova; I.N. Kishmar 📂 Article 📅 1991 🏛 Elsevier Science 🌐 English ⚖ 259 KB

Investigations of the band line-up in se

Investigations of the band line-up in semimetallic InAsGaSb superlattices under hydrostatic pressure

✍ L.M. Claessen; J.C. Maan; M. Altarelli; P. Wyder; L.L. Chang; L. Esaki 📂 Article 📅 1986 🏛 Elsevier Science 🌐 English ⚖ 430 KB

High magnetic field studies of the cross

High magnetic field studies of the crossed-gap superlattice system InAs/GaSb

✍ R.J. Nicholas; K.S.H. Dalton; M. Lakrimi; C. Lopez; R.W. Martin; N.J. Mason; G.M 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 599 KB

Optimization of the growth by MOVPE of s

Optimization of the growth by MOVPE of strained GaSb/InAs double heterojunctions and superlattices on [111] GaAs substrates

✍ M. Lakrimi; R.W. Martin; N.J. Mason; R.J. Nicholas; P.J. Walker 📂 Article 📅 1992 🏛 Elsevier Science 🌐 English ⚖ 540 KB

Growth of InAs1–ySby solid solutions for

Growth of InAs1–ySby solid solutions for obtaining decreased lattice mismatch in the InAs-GaSb (AlxGa1–nSb) system

✍ Dr. L. D. Pramatarova 📂 Article 📅 1983 🏛 John Wiley and Sons 🌐 English ⚖ 337 KB 👁 1 views

This paper presents the results of investigation of the technological conditions of LPE growth of InAsl-,Sb, solid solutions on lnAs substrates. It is shown that the chosen regions of composition of InAsl -$by solid solutions and experimentally determined technological conditions allow the obtaining