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Growth of InAs1–ySby solid solutions for obtaining decreased lattice mismatch in the InAs-GaSb (AlxGa1–nSb) system

✍ Scribed by Dr. L. D. Pramatarova


Publisher
John Wiley and Sons
Year
1983
Tongue
English
Weight
337 KB
Volume
18
Category
Article
ISSN
0232-1300

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✦ Synopsis


This paper presents the results of investigation of the technological conditions of LPE growth of InAsl-,Sb, solid solutions on lnAs substrates. It is shown that the chosen regions of composition of InAsl -$by solid solutions and experimentally determined technological conditions allow the obtaining of InAsl -,Sb, solid solutions with lattice parameter values close to those of the Al,Gal-.Sb (0 5 x 5 0.2) solid solutions. B 3 T O B pa6OTe H3Y9eHbI TeXHOJlOrHgeCKHe YCJIOBHrZ 3IIHTaKCHaJlbHOTO BbIpaIllHBaHH~I IIOIZa3aH0, 9 T O BbI6paHHbIe o6nac~1i COCTaBOB TRepHLIX paCTBOpOB InAsl-,Sb, If a ~c n e p a ~e ~~a n ~~o onpenenemme TexHonormeczme ycnomn IIO~BOJIRIOT nonyyeHHe TBepnblX pacTBOpOB lnAsl -,Sb, CO 3Ha9eHHHMH IlapaMeTpOB PeIIIeTOIc 6JIH3KHMH Ec 3Ha-9eHHHM napaMeTpou peIIIeToK TBepHbIX PaCTBOpOB Al,QaSbl-, (0 5 Z 2 0,2).