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Stabilization of polymorphic phases in oxides. Oxygen vacancies

โœ Scribed by A. V. Belyakov


Book ID
110621625
Publisher
Springer US
Year
1999
Tongue
English
Weight
400 KB
Volume
56
Category
Article
ISSN
0361-7610

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Oxygen vacancies in high-k oxides
โœ K. Tse; D. Liu; K. Xiong; J. Robertson ๐Ÿ“‚ Article ๐Ÿ“… 2007 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 628 KB

High dielectric constant (K) gate oxides such as HfO 2 have suffered from charge trapping, threshold voltage shifts and a difficulty of metal or poly-Si gates to achieve band edge work function values. We investigate how these are related to the oxygen vacancies in a series of ab-initio calculations