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Multiscale simulation on electromigration of the oxygen vacancies in metal oxides

✍ Scribed by Sang Ho Jeon; Won-Joon Son; Bae Ho Park; Seungwu Han

Book ID
106022529
Publisher
Springer
Year
2011
Tongue
English
Weight
706 KB
Volume
102
Category
Article
ISSN
1432-0630

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## Abstract HfO~2~ high‐__K__ gate dielectric has been used as a new gate dielectric in metal–oxide–semiconductor structures. First‐principles simulations are used to study the effects of oxygen vacancies on the tunneling current through the oxide. A level which is nearly 1.25 eV from the bottom of