## Abstract HfO~2~ high‐__K__ gate dielectric has been used as a new gate dielectric in metal–oxide–semiconductor structures. First‐principles simulations are used to study the effects of oxygen vacancies on the tunneling current through the oxide. A level which is nearly 1.25 eV from the bottom of
✦ LIBER ✦
Effects of oxygen vacancy on adhesion of incoherent metal/oxide interface by first-principles calculations
✍ Scribed by Daisuke Matsunaka; Yoji Shibutani
- Book ID
- 108280819
- Publisher
- Elsevier Science
- Year
- 2010
- Tongue
- English
- Weight
- 679 KB
- Volume
- 604
- Category
- Article
- ISSN
- 0039-6028
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## Abstract Self‐consistent band structure and density of states calculations were performed for the pure alumina (corundum phase) and the aluminates α‐Al~2–__x__~ T__~x~__ O~3~ where T is a transition metal and stands for Sc, Y, La and Ac with __x__ = 0.5. In this study we have employed the full p