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Stability of the Si–H bond on the hydrogen-terminated Si(1 1 1) surface studied by sum frequency generation

✍ Scribed by Shen Ye; Toshiya Saito; Satoshi Nihonyanagi; Kohei Uosaki; Paulo B. Miranda; Doseok Kim; Yuen-Ron Shen

No coin nor oath required. For personal study only.

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Stability of the Si–H bond on the hydrogen-terminated Si(1&#xa0;1&#xa0;1) surface studied by sum frequency generation