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Stability and distribution of defect centers induced by high energy particles in high purity silica

✍ Scribed by T.E. Tsai; D.L. Griscom; M.E. Gingerich

Book ID
113279034
Publisher
Elsevier Science
Year
1988
Tongue
English
Weight
547 KB
Volume
32
Category
Article
ISSN
0168-583X

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Silica glass samples were implanted with 1.157 GeV 56 Fe and 1.755 GeV 136 Xe ions to fluences range from 1 Γ‚ 10 11 to 3.8 Γ‚ 10 12 ions/cm 2 . Virgin and irradiated samples were investigated by ultraviolet (UV) absorption from 3 to 6.4 eV and photoluminescence (PL) spectroscopy. The UV absorption in