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Sputtering yields of thin overlayer films by attenuation of the substrate Auger electron signal

โœ Scribed by L. Papagno; G. Luzzi; M. Meuti


Publisher
Elsevier Science
Year
1979
Tongue
English
Weight
386 KB
Volume
60
Category
Article
ISSN
0040-6090

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Beta iron disilicide (b-FeSi 2 ) is one of the candidate materials for a compound semiconductor, which is promising for optoelectronic devices. b-FeSi 2 film has been obtained by ion beam sputter deposition (IBSD) on Si(1 0 0) substrates that are pre-treated by sputter etching by Ne + . In the prese