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Sputtering of AlxGa1−xAs semiconductor targets by Ar+ions with energies of 2–14 keV

✍ Scribed by N. A. Berg; I. P. Soshnikov


Book ID
110120701
Publisher
Springer
Year
1997
Tongue
English
Weight
390 KB
Volume
42
Category
Article
ISSN
1063-7842

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Comparative study of silicon and germani
✍ V.I. Shulga 📂 Article 📅 2007 🏛 Elsevier Science 🌐 English ⚖ 155 KB

Sputtering of amorphous Si and Ge targets by 1-20 keV Ar ions has been studied using the binary-collision simulation. Special attention was given to the angular distribution of sputtered atoms; namely, the energy dependence of the exponent n in the function cos n h approximating the angular distribu