Depth profiling of an In0.53Ga0.47As/InP
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Higashi, Yasuhiro; Maruo, Tetsuya; Homma, Yoshikazu
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Article
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1998
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John Wiley and Sons
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English
β 199 KB
Depth proΓling of thin layers in InP using sputtered neutral mass spectrometry with grazing-In 0.53 Ga 0.47 As incidence ion beam sputtering and laser post-ionization was performed and compared with SIMS and AES depth proΓling. The depth resolution was improved by using grazing incidence (at an inci