Spintronics for next generation innovative devices

✍ Scribed by Saitoh, Eiji; Sato, Katsuaki

• Publisher: John Wiley & Sons Inc
• Year: 2015
• Tongue: English
• Leaves: 263
• Series: Wiley series in materials for electronic and optoelectronic applications
• Category: Library

✦ Synopsis

Spintronics (short for spin electronics, or spin transport electronics) exploits both the intrinsic spin of the electron and its associated magnetic moment, in addition to its fundamental electronic charge, in solid-state devices. Controlling the spin of electrons within a device can produce surprising and substantial changes in its properties. Drawing from many cutting edge fields, including physics, materials science, and electronics device technology, spintronics has provided the key concepts for many next generation information processing and transmitting technologies. This book discusses all aspects of spintronics from basic science to applications.

✦ Table of Contents

Content: Cover
Title Page
Copyright
Contents
List of Contributors
Series Preface
Preface
Introduction
Materials for Spintronics
Spin Injector Materials with High Polarization
Carbon Spintronics
Silicon Spintronics
Spintronics Functions
Spin-Dependent Transport
Spin Current, Spin Hall Effect, and Spin Pumping
Spin Torque
Spin Seebeck Effect
Electric Control of Spin Phenomena
Spin Photonics
Chapter 1 Fundamentals of Magnetoresistance Effects
1.1 Giant Magnetoresistance (GMR) Effect
1.1.1 Magnetoresistance Effects in Ferromagnetic Materials
1.1.2 Phenomenon of GMR Effect. 1.1.3 Mechanism of GMR Effect1.1.4 Oscillatory Behavior of Interlayer Exchange Coupling and GMR
1.1.5 The Application of GMR and the Spin Valve
1.1.6 CIP-GMR and CPP-GMR
1.1.7 GMR in Granular Systems
1.2 Tunnel Magnetoresistance (TMR) Effect
1.2.1 The Principle of TMR
1.2.2 TMR Effect in Transition Metals and Alloys with Al-O Tunnel Barrier
1.2.3 TMR Effect in Half-Metallic Systems
1.2.4 TMR Effect with Coherent Tunneling
1.2.5 TMR Effect in Granular Systems
References
Chapter 2 Spintronics Materials with High-Spin Polarization
2.1 Introduction. 2.2 Development of Highly Spin Polarized Materials2.3 Device Applications
2.3.1 CPP-GMR Devices using Highly Spin Polarized Heusler Alloys
2.3.2 Narrow Read Sensor for High Density Recording
2.4 Summary
Acknowledgements
References
Chapter 3 Spin Current
3.1 Introduction
3.2 Concept of Spin Current
3.3 An Exact Definition of Spin Current
3.3.1 Microscopic Description of Conduction Electrons
3.3.2 Conservation of Charge
3.3.3 Conservation of Spin and Spin Current
3.4 Incoherent Spin Current
3.4.1 Fermi-Dirac Distribution [3, 4, 5]
3.4.2 Diffusion Equation. 3.4.3 Spin Diffusion Equation [6]3.5 Exchange Spin Current
3.5.1 Magnetic Order and Exchange Interaction
3.5.2 Exchange Spin Current
3.5.3 Spin-Wave Spin Current
3.6 Topological Spin Current
3.6.1 Bulk Topological Spin Current
3.6.2 Surface Topological Spin Current
3.7 Thermal Spin Current --
Spin Seebeck Effect
3.7.1 Sample Configuration and Measurement Mechanism
3.7.2 Longitudinal Spin Seebeck Effect
3.7.3 Transverse Spin Seebeck Effect
3.7.4 Thermoelectric Coating based on Spin Seebeck Effect
3.7.5 Basic Mechanism of Spin Seebeck Effect
3.8 Concluding Remarks
References. Chapter 4 Spin Hall Effect and Inverse Spin Hall Effect4.1 Spin Hall Effect
4.1.1 Introduction
4.1.2 Intrinsic and Extrinsic Hall Effect
4.1.3 Experimental Observation of Spin Hall Effect in Semiconductors and Metals
4.1.4 Intrinsic Hall Effects for Photons and Magnons
4.2 Topological Insulators
4.2.1 Two-Dimensional Topological Insulators
4.2.2 Three-Dimensional Topological Insulators
4.2.3 Experiments on Topological Insulators
4.3 Summary
Acknowledgment
References
Chapter 5 Spin Torque (Domain Wall Drive, Magnetization Reversal)
5.1 Introduction.

✦ Subjects

Spintronics;TECHNOLOGY & ENGINEERING;Electrical;Nanoelectromechanical systems;Semiconductors