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Spin polarization dynamics in n-doped InAs/GaAs quantum dots

✍ Scribed by S. Cortez; A. Jbeli; X. Marie; O. Krebs; R. Ferreira; T. Amand; P. Voisin; J.-M. Gérard

Publisher: Elsevier Science
Year: 2002
Tongue: English
Weight: 95 KB
Volume: 13
Category: Article
ISSN: 1386-9477
DOI: 10.1016/s1386-9477(02)00181-9

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✦ Synopsis

We present measurements of electronic spin relaxation and manipulation in n-doped semiconductor quantum dots. A luminescence based nonresonant pump-probe method has been developed to determine the degree of spin polarization of electrons conÿned in the dots. We observe an electronic spin memory e ect up to 20 ns. The mechanism of spin polarization and relaxation are thoroughly analyzed both by continuous wave and time resolved nonresonant luminescence.

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